Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi2Te4
نویسندگان
چکیده
منابع مشابه
Interface electronic structure at the topological insulator-ferrimagnetic insulator junction.
An interface electron state at the junction between a three-dimensional topological insulator film, Bi2Se3, and a ferrimagnetic insulator film, Y3Fe5O12 (YIG), was investigated by measurements of angle-resolved photoelectron spectroscopy and x-ray absorption magnetic circular dichroism. The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ in the YI...
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Figure 1 . −K band structure evolution with T Si : a) 560 K (DP = 0.34 eV), b) 580 K (DP = 0.27 eV), c) 600 K (DP = 0.23 eV), d) 625 K (DP = 0.14 eV), and e) 630 K (DP = 0.12 eV). Upper panels show the ARPES intensity maps and lower panels show the corresponding MDC, measured at an interval of 10 meV. Red, purple, and green curves mark E F , VBM, and conduction band minimum (CBM), respectively....
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ژورنال
عنوان ژورنال: Physical Review X
سال: 2019
ISSN: 2160-3308
DOI: 10.1103/physrevx.9.041040